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Notebook & PDA

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Application Overview

Computers and peripheral devices are already a complete and mature block in the electronics market, providing a full range of passive components suitable for power supplies such as server power supplies, desktop power supplies, and power adapters.

Notebook & PDA

High power resistance
- UR Low resistance low TC high power thick film chip resistor
  
  Series：UR
  Power (W)：1/8W~1W
  Specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：pls see detail in datasheet
- CH Low resistance high power thick film chip resistor
  
  Series：CH
  Power (W)：1/10W~2W
  Specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：0.05Ω~1Ω
- CH High power thick film chip resistor
  
  Series：CH
  Power (W)：1/10W~2W
  Specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 2% 5%
  Block：1Ω~10MΩ
Chip Thick Film Resistor
- RC High voltage thick film chip resistor
  
  Series：RC
  Power (W)：1/10W~1/4W
  Specification：0603（1608） 0805（2012） 1206（3216）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 2% 5%
  Block：47Ω~10MΩ
- RL Thick film chip resistors with low temperature coefficient
  
  Series：RL
  Power (W)：1/20W~1W
  Specification：0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：0.1% 0.5%1% 5%
  Block：1Ω~1MΩ
- CR LED Thick Film Chip Resistor
  
  Series：CR
  Power (W)：1/8W~1/4W
  Specification：0805（2012） 1206（3216）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 2% 5%
  Block：1Ω~10MΩ
- CA Thick film patch exclusion-convex electrode
  
  Series：CA
  Power (W)：1/16W~1/10W
  Specification：CA024A CA034A
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：1Ω~1MΩ
- CR Low resistance thick film chip resistors
  
  Series：CR
  Power (W)：1/16W~1W
  Specification：0402~2512
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：0.02Ω~1Ω
- PF Lead-free thick film chip resistors
  
  Series：PF
  Power (W)：1/20W~1W
  Specification：0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：0.1% 0.5%1% 2% 5%
  Block：1Ω~22MΩ
- CR Thick film chip resistor
  
  Series：CR
  Power (W)：1/20W~1W
  Specification：01005（0402） 0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：0.1% 0.5% 1% 5%
  Block：1Ω~100MΩ
Alloy foil chip resistor
- RA Alloy foil chip resistor
  
  Series：RA
  Power (W)：1/8W
  Specification：0201（0603）
  Temperature Coefficient：±150ppm/℃
  Accuracy：1% 2% 5%
  Block：3mΩ~4mΩ
Alloy chip resistor
- RM Alloy chip resistor
  
  Series：RM
  Power (W)：1W
  Specification：1206（3216）
  Temperature Coefficient：±50ppm/℃
  Accuracy：1% 2% 5%
  Block：2mΩ~30mΩ
Low resistance low TC high power thick film chip resistor
- UR Low resistance low TC high power thick film chip resistor
  
  Series：UR
  Power (W)：1/8W
  Specification：0402（1005）
  Temperature Coefficient：±500ppm/℃ ±100ppm/℃
  Accuracy：1% 5%
  Block：0.024Ω~0.027Ω 0.030Ω~0.910Ω
Low resistance high power thick film resistor
- CH Low resistance high power thick film resistor
  
  Series：CH
  Power (W)：1/10W
  Specification：0402（1005）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：0.05Ω~1Ω(不含)
Low resistance thick film chip resistors
- CR Low resistance thick film chip resistors
  
  Series：CR
  Power (W)：1/16W
  Specification：0402（1005）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：0.025Ω~1Ω
Chip Zener Diode
- 1 CDZ55B
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：2.4V~75V (2.4Vonly 5%）
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：Depending on voltage
- 1 CDZ55B-S
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：2.4V~75V (2.4Vonly 5%）
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：Depending on voltage
- 1 CDZ55B-T
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：2.4V~75V (2.4Vonly 5%）
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：Depending on voltage
- 1 CDZ55C
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：2.4V~75V (2.4Vonly 5%）
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：Depending on voltage
- 1 CDZ55C-S
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：2.4V~75V (2.4Vonly 5%）
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：Depending on voltage
- 1 CDZ55C-M
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：5.1V~5.6V
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：<100
- 1 CDZ55C-SM
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：5.1V~5.6V
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：<100
- 1 CDZ55C-TM
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：5.1V~5.6V
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：<100
Switching diode
- 75 CD4148WQR
  
  Maximum reverse voltage (V)：75
  Average rectified forward current (A)：0.15
  Forward voltage (V)：1 @ IF=50mA
  Reverse current (uA)：0.025 @ VR=20V 2.5 @ VR=75V
  Package：DFN1006-2
- 30 CD4448WQR
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.46 @ IF=10mA
  Reverse current (uA)：0.3 @ VR=10V
  Package：DFN1006-2
Schottky diodes
- 30 CDB0130KRL
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.37 @ IF=10mA
  Reverse current (uA)：7 @ VR=10V
  Package：DFN0603-2
- 30 CDB0130KRM
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.46 @ IF=10mA
  Reverse current (uA)：0.3 @ VR=10V
  Package：DFN0603-2
- 30 CDB0130QRL
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.29 @ IF=10mA 0.30 @ IF=20mA 0.40 @ IF=100mA
  Reverse current (uA)：30 @ VR=30V
  Package：DFN1006-2
- 30 CDB0130QRM
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.51 @ IF=100mA
  Reverse current (uA)：1 @ VR=10V
  Package：DFN1006-2
- 40 CDB0140QRL
  
  Maximum reverse voltage (V)：40
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.34 @ IF=10mA 0.55 @ IF=100mA
  Reverse current (uA)：10 @ VR=10V 40 @ VR=40V
  Package：DFN1006-2
- 40 CDB0140QRM
  
  Maximum reverse voltage (V)：40
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.36 @ IF=10mA 0.51 @ IF=100mA
  Reverse current (uA)：1 @ VR=10V 5 @ VR=40V
  Package：DFN1006-2
- 30 CDB0230QRL
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.2
  Forward voltage (V)：0.50 @ IF=200mA
  Reverse current (uA)：10 @ VR=10V
  Package：DFN1006-2
- 30 CDB0230QRM
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.2
  Forward voltage (V)：0.60 @ IF=200mA
  Reverse current (uA)：1 @ VR=10V
  Package：DFN1006-2
- 40 CDB0240QRL
  
  Maximum reverse voltage (V)：40
  Average rectified forward current (A)：0.2
  Forward voltage (V)：0.33 @ IF=10mA 0.52 @ IF=200mA
  Reverse current (uA)：10 @ VR=10V 40 @ VR=40V
  Package：DFN1006-2
- 40 CDB0240QRM
  
  Maximum reverse voltage (V)：40
  Average rectified forward current (A)：0.2
  Forward voltage (V)：0.36 @ IF=10mA 0.60 @ IF=200mA
  Reverse current (uA)：1 @ VR=10V 5 @ VR=40V
  Package：DFN1006-2
- 20 CDB0520QRL
  
  Maximum reverse voltage (V)：20
  Average rectified forward current (A)：0.5
  Forward voltage (V)：0.27 @ IF=10mA 0.46 @ IF=500mA
  Reverse current (uA)：20 @ VR=10V 30 @ VR=20V
  Package：DFN1006-2
- 30 CDB0530QRL
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.5
  Forward voltage (V)：0.27 @ IF=10mA 0.46 @ IF=500mA
  Reverse current (uA)：20 @ VR=10V 40 @ VR=30V
  Package：DFN1006-2
- 40 CDB0540QRL
  
  Maximum reverse voltage (V)：40
  Average rectified forward current (A)：0.5
  Forward voltage (V)：0.27 @ IF=10mA 0.46 @ IF=500mA
  Reverse current (uA)：20 @ VR=10V 50 @ VR=40V
  Package：DFN1006-2
Antistatic surge diode
- 1 ESDKR5V0BS
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：5.6
  Leakage current (nA)：10
  Antistatic ability (contact) (kV)：±25
  Antistatic ability (gap) (kV)：±30
  Maximum peak pulse current (A) tp = 8/20 μs：3.5
  Clamping voltage (V) tp = 8/20 μs：3.5
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：10
  Package：DFN0603-2
- 1 ESDKR5V0UJ
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±19
  Antistatic ability (gap) (kV)：±19
  Maximum peak pulse current (A) tp = 8/20 μs：2
  Clamping voltage (V) tp = 8/20 μs：12 @IPP=1A 15 @IPP=2A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.6
  Package：DFN0603-2
- 1 ESDQR3V3B
  
  Number of channels：1
  Starting voltage (V)：3.3
  Breakdown voltage (V)：3.5
  Leakage current (nA)：1000
  Antistatic ability (contact) (kV)：±30
  Antistatic ability (gap) (kV)：±30
  Maximum peak pulse current (A) tp = 8/20 μs：15
  Clamping voltage (V) tp = 8/20 μs：6.0 @IPP=1A 12 @IPP=15A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：30
  Package：DFN1006-2
- 1 ESDQR3V3BS
  
  Number of channels：1
  Starting voltage (V)：3.3
  Breakdown voltage (V)：4
  Leakage current (nA)：1000
  Antistatic ability (contact) (kV)：±12
  Antistatic ability (gap) (kV)：±20
  Maximum peak pulse current (A) tp = 8/20 μs：5
  Clamping voltage (V) tp = 8/20 μs：5.5 @IPP=1A 8.0 @IPP=5A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：10
  Package：DFN1006-2
- 1 ESDQR5V0B
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±30
  Antistatic ability (gap) (kV)：±30
  Maximum peak pulse current (A) tp = 8/20 μs：7.9
  Clamping voltage (V) tp = 8/20 μs：9.0 @IPP=1A 17.5 @IPP=7.9A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：20
  Package：DFN1006-2
- 1 ESDQR5V0BJ
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±15
  Maximum peak pulse current (A) tp = 8/20 μs：2
  Clamping voltage (V) tp = 8/20 μs：14 @IPP=1A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.6
  Package：DFN1006-2
- 1 ESDQR5V0BS
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：100
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±15
  Maximum peak pulse current (A) tp = 8/20 μs：2
  Clamping voltage (V) tp = 8/20 μs：12 @IPP=1A 17 @IPP=2A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：10
  Package：DFN1006-2
- 1 ESDQR5V0BX
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±15
  Maximum peak pulse current (A) tp = 8/20 μs：2
  Clamping voltage (V) tp = 8/20 μs：14 @IPP=1A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.3
  Package：DFN1006-2
- 1 ESDQR5V0U
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：1000
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±15
  Maximum peak pulse current (A) tp = 8/20 μs：10
  Clamping voltage (V) tp = 8/20 μs：13.5 @IPP=10A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：80
  Package：DFN1006-2
- 1 ESDQR5V0UJ
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±18
  Antistatic ability (gap) (kV)：±20
  Maximum peak pulse current (A) tp = 8/20 μs：3.6
  Clamping voltage (V) tp = 8/20 μs：12 @IPP=1A 20 @IPP=3A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.5
  Package：DFN1006-2
- 1 ESDQR12V0B
  
  Number of channels：1
  Starting voltage (V)：12
  Breakdown voltage (V)：14.6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±16
  Maximum peak pulse current (A) tp = 8/20 μs：6
  Clamping voltage (V) tp = 8/20 μs：19 @IPP=1A 25 @IPP=6A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：30
  Package：DFN1006-2
- 1 ESDQR12V0U
  
  Number of channels：1
  Starting voltage (V)：12
  Breakdown voltage (V)：13.3
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±30
  Antistatic ability (gap) (kV)：±30
  Maximum peak pulse current (A) tp = 8/20 μs：5
  Clamping voltage (V) tp = 8/20 μs：19 @IPP=1A 24 @IPP=5A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：60
  Package：DFN1006-2
- 1 ESDQR24V0B
  
  Number of channels：1
  Starting voltage (V)：24
  Breakdown voltage (V)：26.5
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±25
  Antistatic ability (gap) (kV)：±25
  Maximum peak pulse current (A) tp = 8/20 μs：3
  Clamping voltage (V) tp = 8/20 μs：36 @IPP=1A 42 @IPP=3A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：30
  Package：DFN1006-2
- 1 ESDQR24V0U
  
  Number of channels：1
  Starting voltage (V)：24
  Breakdown voltage (V)：26.5
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±25
  Antistatic ability (gap) (kV)：±25
  Maximum peak pulse current (A) tp = 8/20 μs：3
  Clamping voltage (V) tp = 8/20 μs：36 @IPP=1A 42 @IPP=3A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：35
  Package：DFN1006-2
- 1 ESDQR36V0B
  
  Number of channels：1
  Starting voltage (V)：36
  Breakdown voltage (V)：40
  Leakage current (nA)：100
  Antistatic ability (contact) (kV)：±25
  Antistatic ability (gap) (kV)：±25
  Maximum peak pulse current (A) tp = 8/20 μs：1.5
  Clamping voltage (V) tp = 8/20 μs：58 @IPP=1A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：20
  Package：DFN1006-2
- 1 ESDQR36V0U
  
  Number of channels：1
  Starting voltage (V)：36
  Breakdown voltage (V)：40
  Leakage current (nA)：100
  Antistatic ability (contact) (kV)：±25
  Antistatic ability (gap) (kV)：±25
  Maximum peak pulse current (A) tp = 8/20 μs：1.5
  Clamping voltage (V) tp = 8/20 μs：58 @IPP=1A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：30
  Package：DFN1006-2
- 4 RESDMRA3V3J
  
  Number of channels：4
  Starting voltage (V)：3.3
  Breakdown voltage (V)：3.4
  Leakage current (nA)：100
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±15
  Maximum peak pulse current (A) tp = 8/20 μs：4
  Clamping voltage (V) tp = 8/20 μs：8 @IPP=1A 10 @IPP=3A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.65
  Package：DFN2510-10
- 4 RESDMRA5V0J
  
  Number of channels：4
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：1000
  Antistatic ability (contact) (kV)：±12
  Antistatic ability (gap) (kV)：±17
  Maximum peak pulse current (A) tp = 8/20 μs：5
  Clamping voltage (V) tp = 8/20 μs：15 @IPP=1A 25 @IPP=5A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.8
  Package：DFN2510-10
- 4 RESDMRA5V0X
  
  Number of channels：4
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：1000
  Antistatic ability (contact) (kV)：±12
  Antistatic ability (gap) (kV)：±17
  Maximum peak pulse current (A) tp = 8/20 μs：3.4
  Clamping voltage (V) tp = 8/20 μs：15 @IPP=1A 25 @IPP=3.4A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.4
  Package：DFN2510-10